![]() In this study, the ionizing radiation (gamma-irradiation) response of the metal-ferroelectric-semiconductor (MFS) type capacitors whose interfacial layer is bismuth titanate (Bi 4Ti 3O 12), which is from the Aurivillius family, was investigated. Meanwhile, the measured capacitance and conductance were corrected taking into account the effect of series resistance (R s). Because as the frequency increases, the interface states cannot follow alternating current (ac) signal. ![]() The N ss value obtained from all methods decreased as the frequency increased. the interface state density (N ss) was estimated by various methods such as low-high frequency capacitance (C LF-C HF), Hill-Coleman and conductance. The variation of C and G with frequency comes from the existence of interface states. The C and G value decrease with increase in frequency. Significant shifts in capacitance (C) and conductance (G) characteristics were observed for the MPS structure. Admittance (Y = G + iωC) based measurements of Al/Gr-PVA/p-Si (MPS) structure were performed in the frequency range from 5 kHz to 5 MHz at room temperature. It was found that the Al/Mg 2Si/p-Si Schottky diode is suitable for use in electronic applications in a wide temperature and frequency range.Ī metal-polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method. ![]() Besides, diffusion potential (V D), Fermi energy (E F), concentration of acceptor atoms (N A), the depletion layer width (W D) and frequency dependent obstacle height (Φ B0C–V) values were calculated from frequency dependent measurements. For the Al/Mg 2Si/p-Si Schottky diode, the temperature-dependence of ideality factor (n), saturation current (I 0), zero-bias barrier height (Φ B0), serial resistance (R s) and interface state density (N ss) were investigated. The frequency-dependent measurements were also performed in the range of 1 kHz–5 MHz. For the fabricated diode, temperature-dependent measurements were made in the range of 120–340 K with an increment of 20 K. The structural and surface morphological features of the interface layer (Mg 2Si) were analyzed by XRD, SEM, and EDX. The electrical properties of Al/Mg 2Si/p-Si Schottky diodes fabricated were examined at various frequencies and temperatures. ![]() Experimental results show that: (1) the apparent interface density increases sharply towards the band edges (2) in the structure having an important flat band translation the apparent interface state distribution can be attributed to the spatial fluctuation of the interface potential (3) MOS structures having 〈111〉 orientation have an interface state distribution different from 〈100〉 homologous structures for a 〈111〉 structure we find a peak of apparent interface density probably due to a donor defect in the silicon. We show theoretically that this apparent inteiface density can contain a contribution of defects unspecific of the interface, for instance: spatial fluctuation of the interface potential or silicon defects introducing a deep level in the band gap. The knowledge of the exact very low frequency MOS capacitance permits us to determine for a given structure the apparent interface density in the whole band gap of silicon. Two measurement methods of the MOS capacitance under conditions of total reversibility are described. ![]()
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